Nambari ya Bidhaa ya Mtengenezaji:
SQJ202EP-T1_GE3
Product Overview
Mtengenezaji:
Vishay Siliconix
Nambari ya Kipande:
SQJ202EP-T1_GE3-DG
Maelezo:
MOSFET 2N-CH 12V 20A PPAK SO8
Maelezo ya Kina:
Mosfet Array 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Hesabu:
2805 Pcs Mpya Halisi Katika Hifadhi
12915807
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
qX0O
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
SQJ202EP-T1_GE3 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET, MOSFET Mifumo
Mtengenezaji
Vishay
Ufungashaji
Tape & Reel (TR)
Mfululizo
TrenchFET®
Hali ya Bidhaa
Active
Teknolojia
MOSFET (Metal Oxide)
Usanidi
2 N-Channel (Dual)
Kipengele cha FET
-
Drain kwa Voltage ya Chanzo (Vdss)
12V
Sasa - Drain inayoendelea (id) @ 25 ° C
20A, 60A
Rds Kwenye (Max) @ Id, Vgs
6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
22nC @ 10V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
975pF @ 6V
Nguvu - Max
27W, 48W
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Muuzaji
PowerPAK® SO-8 Dual Asymmetric
Nambari ya Bidhaa ya Msingi
SQJ202
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
742-SQJ202EP-T1_GE3DKR
SQJ202EP-T1_GE3DKR
SQJ202EP-T1_GE3CT-DG
SQJ202EP-T1_GE3TR-DG
SQJ202EP-T1_GE3TR
742-SQJ202EP-T1_GE3CT
SQJ202EP-T1_GE3CT
SQJ202EP-T1_GE3DKR-DG
742-SQJ202EP-T1_GE3TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SI5903DC-T1-GE3
MOSFET 2P-CH 20V 2.1A 1206-8
SI4916DY-T1-GE3
MOSFET 2N-CH 30V 10A/10.5A 8SOIC
SIF912EDZ-T1-E3
MOSFET 2N-CH 30V 7.4A PPAK
