Nambari ya Bidhaa ya Mtengenezaji:
SISH129DN-T1-GE3
Product Overview
Mtengenezaji:
Vishay Siliconix
Nambari ya Kipande:
SISH129DN-T1-GE3-DG
Maelezo:
MOSFET P-CH 30V 14.4A/35A PPAK
Maelezo ya Kina:
P-Channel 30 V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
Hesabu:
90 Pcs Mpya Halisi Katika Hifadhi
13061230
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
sYFy
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
SISH129DN-T1-GE3 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Vishay
Ufungashaji
Tape & Reel (TR)
Mfululizo
TrenchFET®
Ufungaji
Tape & Reel (TR)
Hali ya Sehemu
Active
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
14.4A (Ta), 35A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
11.4mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3345 pF @ 15 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
3.8W (Ta), 52.1W (Tc)
Joto la Uendeshaji
-50°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PowerPAK® 1212-8SH
Kifurushi / Kesi
PowerPAK® 1212-8SH
Nambari ya Bidhaa ya Msingi
SISH129
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
SISH129DN-T1-GE3CT
SISH129DN-T1-GE3DKR
SISH129DN-T1-GE3TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SI1488DH-T1-E3
MOSFET N-CH 20V 6.1A SC70-6
SIRA66DP-T1-GE3
MOSFET N-CH 30V 50A PPAK SO-8
SI4190DY-T1-GE3
MOSFET N-CH 100V 20A 8-SOIC
