Nambari ya Bidhaa ya Mtengenezaji:
SQJ560EP-T1_GE3
Product Overview
Mtengenezaji:
Vishay Siliconix
Nambari ya Kipande:
SQJ560EP-T1_GE3-DG
Maelezo:
MOSFET N/P-CH 60V 30A PPAK SO8
Maelezo ya Kina:
Mosfet Array 60V 30A (Tc), 18A (Tc) 34W (Tc) Surface Mount PowerPAK® SO-8 Dual
Hesabu:
22864 Pcs Mpya Halisi Katika Hifadhi
12918267
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Bzq3
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
SQJ560EP-T1_GE3 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET, MOSFET Mifumo
Mtengenezaji
Vishay
Ufungashaji
Tape & Reel (TR)
Mfululizo
TrenchFET®
Hali ya Bidhaa
Active
Teknolojia
MOSFET (Metal Oxide)
Usanidi
N and P-Channel
Kipengele cha FET
-
Drain kwa Voltage ya Chanzo (Vdss)
60V
Sasa - Drain inayoendelea (id) @ 25 ° C
30A (Tc), 18A (Tc)
Rds Kwenye (Max) @ Id, Vgs
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
30nC @ 10V, 45nC @ 10V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1650pF @ 25V
Nguvu - Max
34W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Muuzaji
PowerPAK® SO-8 Dual
Nambari ya Bidhaa ya Msingi
SQJ560
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
SQJ560EP-T1_GE3DKR
SQJ560EP-T1_GE3TR
SQJ560EP-T1_GE3CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SIA914DJ-T1-E3
MOSFET 2N-CH 20V 4.5A SC70-6
SI4330DY-T1-GE3
MOSFET 2N-CH 30V 6.6A 8SOIC
SI3588DV-T1-GE3
MOSFET N/P-CH 20V 2.5A 6-TSOP