Nambari ya Bidhaa ya Mtengenezaji:
TPH4R606NH,L1Q
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TPH4R606NH,L1Q-DG
Maelezo:
MOSFET N-CH 60V 32A 8SOP
Maelezo ya Kina:
N-Channel 60 V 32A (Ta) 1.6W (Ta), 63W (Tc) Surface Mount 8-SOP Advance (5x5)
Hesabu:
4980 Pcs Mpya Halisi Katika Hifadhi
12890603
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
DKmZ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TPH4R606NH,L1Q Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
32A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
4.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Malipo ya lango (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3965 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
1.6W (Ta), 63W (Tc)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-SOP Advance (5x5)
Kifurushi / Kesi
8-PowerVDFN
Nambari ya Bidhaa ya Msingi
TPH4R606
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
5,000
Majina mengine
TPH4R606NHL1QDKR
TPH4R606NHL1QTR
TPH4R606NHL1Q
TPH4R606NHL1QCT
TPH4R606NH,L1Q(M
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
TPN2R703NL,L1Q
MOSFET N-CH 30V 45A 8TSON
TK3A60DA(Q,M)
MOSFET N-CH 600V 2.5A TO220SIS
TK100L60W,VQ
MOSFET N-CH 600V 100A TO3P
