Nambari ya Bidhaa ya Mtengenezaji:
TPC8036-H(TE12L,QM
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TPC8036-H(TE12L,QM-DG
Maelezo:
MOSFET N-CH 30V 18A 8SOP
Maelezo ya Kina:
N-Channel 30 V 18A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Hesabu:
12890295
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
EYoe
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TPC8036-H(TE12L,QM Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
U-MOSVI-H
Hali ya Bidhaa
Obsolete
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
18A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
4.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
4600 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
1W (Ta)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-SOP (5.5x6.0)
Kifurushi / Kesi
8-SOIC (0.173", 4.40mm Width)
Nambari ya Bidhaa ya Msingi
TPC8036
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
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MOSFET N-CH 650V 5.2A TO220SIS
