Nambari ya Bidhaa ya Mtengenezaji:
TK25S06N1L,LXHQ
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TK25S06N1L,LXHQ-DG
Maelezo:
MOSFET N-CH 60V 25A DPAK
Maelezo ya Kina:
N-Channel 60 V 25A (Ta) 57W (Tc) Surface Mount DPAK+
Hesabu:
3605 Pcs Mpya Halisi Katika Hifadhi
12938295
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
bRof
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TK25S06N1L,LXHQ Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
25A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
36.8mOhm @ 12.5A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Malipo ya lango (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
855 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
57W (Tc)
Joto la Uendeshaji
175°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
DPAK+
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
TK25S06
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Majina mengine
264-TK25S06N1LLXHQDKR
264-TK25S06N1LLXHQTR
TK25S06N1L,LXHQ(O
264-TK25S06N1LLXHQCT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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