TK25S06N1L,LXHQ
Nambari ya Bidhaa ya Mtengenezaji:

TK25S06N1L,LXHQ

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

TK25S06N1L,LXHQ-DG

Maelezo:

MOSFET N-CH 60V 25A DPAK
Maelezo ya Kina:
N-Channel 60 V 25A (Ta) 57W (Tc) Surface Mount DPAK+

Hesabu:

3605 Pcs Mpya Halisi Katika Hifadhi
12938295
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
wKuf
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

TK25S06N1L,LXHQ Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
25A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
36.8mOhm @ 12.5A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Malipo ya lango (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
855 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
57W (Tc)
Joto la Uendeshaji
175°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
DPAK+
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
TK25S06

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Taarifa za Ziada

Kifurushi cha Kawaida
2,000
Majina mengine
264-TK25S06N1LLXHQDKR
264-TK25S06N1LLXHQTR
TK25S06N1L,LXHQ(O
264-TK25S06N1LLXHQCT

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
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