RN4608(TE85L,F)
Nambari ya Bidhaa ya Mtengenezaji:

RN4608(TE85L,F)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN4608(TE85L,F)-DG

Maelezo:

TRANS NPN/PNP PREBIAS 0.3W SM6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6

Hesabu:

2669 Pcs Mpya Halisi Katika Hifadhi
12891758
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
DORQ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN4608(TE85L,F) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
1 NPN, 1 PNP - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
22kOhms
Resistor - Msingi wa Emitter (R2)
47kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
200MHz
Nguvu - Max
300mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-74, SOT-457
Kifurushi cha Kifaa cha Muuzaji
SM6
Nambari ya Bidhaa ya Msingi
RN4608

Karatasi za Takwimu na Nyaraka

Karatasi za data

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
RN4608(TE85LF)CT
RN4608(TE85LF)TR
RN4608(TE85LF)DKR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
toshiba-semiconductor-and-storage

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diodes

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TRANS 2NPN PREBIAS 0.3W SM6

diodes

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