RN2101,LF(CT
Nambari ya Bidhaa ya Mtengenezaji:

RN2101,LF(CT

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN2101,LF(CT-DG

Maelezo:

TRANS PREBIAS PNP 50V 0.1A SSM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

Hesabu:

Ombi la Quotations Mtandaoni
12889598
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
Q4H9
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN2101,LF(CT Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
PNP - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
4.7 kOhms
Resistor - Msingi wa Emitter (R2)
4.7 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
200 MHz
Nguvu - Max
100 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-75, SOT-416
Kifurushi cha Kifaa cha Muuzaji
SSM
Nambari ya Bidhaa ya Msingi
RN2101

Karatasi za Takwimu na Nyaraka

Karatasi za data
RN2101-06

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
RN2101LF(CTTR
RN2101LF(CTTRDKR-DG
RN2101LF(CTCT
RN2101(T5LFT)DKR
RN2101(T5L,F,T)
RN2101(T5LFT)CT-DG
RN2101(T5LFT)TR-DG
RN2101,LF(CB
RN2101(T5LFT)TR
RN2101LF(CTDKR
RN2101(T5LFT)DKR-DG
RN2101(T5LFT)CT

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Mifano Mbadala

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