Nambari ya Bidhaa ya Mtengenezaji:
RN1962FE(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1962FE(TE85L,F)-DG
Maelezo:
TRANS 2NPN PREBIAS 0.1W ES6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Hesabu:
3815 Pcs Mpya Halisi Katika Hifadhi
12891334
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1962FE(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Cut Tape (CT) & Digi-Reel®
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 NPN - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
10kOhms
Resistor - Msingi wa Emitter (R2)
10kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
250MHz
Nguvu - Max
100mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
RN1962
Taarifa za Ziada
Kifurushi cha Kawaida
4,000
Majina mengine
RN1962FE(TE85LF)TR
RN1962FE(TE85LF)DKR
RN1962FETE85LF
RN1962FE(TE85LF)CT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Mifano Mbadala
NAMBARI YA SEHEMU
RN1102MFV,L3F
MTENGENEZAJI
Toshiba Semiconductor and Storage
KIASI KILICHOPATIKANA
13398
Nambari ya Sehemu
RN1102MFV,L3F-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
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