RN1961FE(TE85L,F)
Nambari ya Bidhaa ya Mtengenezaji:

RN1961FE(TE85L,F)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN1961FE(TE85L,F)-DG

Maelezo:

TRANS 2NPN PREBIAS 0.1W ES6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Hesabu:

Ombi la Quotations Mtandaoni
12891640
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN1961FE(TE85L,F) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 NPN - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
4.7kOhms
Resistor - Msingi wa Emitter (R2)
4.7kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
250MHz
Nguvu - Max
100mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
RN1961

Taarifa za Ziada

Kifurushi cha Kawaida
4,000
Majina mengine
RN1961FE(TE85LF)DKR
RN1961FE(TE85LF)TR
RN1961FE(TE85LF)CT
RN1961FETE85LF

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Bidhaa Zinazohusiana
toshiba-semiconductor-and-storage

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TRANS 2NPN PREBIAS 0.1W ESV

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TRANS 2PNP PREBIAS 0.2W US6

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