Nambari ya Bidhaa ya Mtengenezaji:
RN1909FE(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1909FE(TE85L,F)-DG
Maelezo:
TRANS 2NPN PREBIAS 0.1W ES6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Hesabu:
3948 Pcs Mpya Halisi Katika Hifadhi
12889550
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
nIrI
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1909FE(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
2 NPN - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
47kOhms
Resistor - Msingi wa Emitter (R2)
22kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
250MHz
Nguvu - Max
100mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
RN1909
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
4,000
Majina mengine
RN1909FE(TE85LF)DKR
RN1909FE(TE85LF)TR
RN1909FE(TE85LF)CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
RN4611(TE85L,F)
TRANS NPN/PNP PREBIAS 0.3W SM6
RN1910,LF(CT
TRANS 2NPN PREBIAS 0.1W US6
RN1904,LF(CT
TRANS 2NPN PREBIAS 0.2W US6
