Nambari ya Bidhaa ya Mtengenezaji:
RN1607(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1607(TE85L,F)-DG
Maelezo:
TRANS 2NPN PREBIAS 0.3W SM6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6
Hesabu:
1271 Pcs Mpya Halisi Katika Hifadhi
12889494
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
dXDJ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1607(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
2 NPN - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
10kOhms
Resistor - Msingi wa Emitter (R2)
47kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
250MHz
Nguvu - Max
300mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-74, SOT-457
Kifurushi cha Kifaa cha Muuzaji
SM6
Nambari ya Bidhaa ya Msingi
RN1607
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
RN1607(TE85LF)DKR
RN1607(TE85LF)TR
RN1607(TE85LF)CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Mifano Mbadala
NAMBARI YA SEHEMU
PIMH9,115
MTENGENEZAJI
Nexperia USA Inc.
KIASI KILICHOPATIKANA
3000
Nambari ya Sehemu
PIMH9,115-DG
BEI YA KILA KITU
0.04
AINA YA KUBADILISHA
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