Nambari ya Bidhaa ya Mtengenezaji:
RN1114MFV,L3F
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1114MFV,L3F-DG
Maelezo:
TRANS PREBIAS NPN 50V 0.1A VESM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
Hesabu:
8000 Pcs Mpya Halisi Katika Hifadhi
12889727
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
cZxr
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1114MFV,L3F Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
1 kOhms
Resistor - Msingi wa Emitter (R2)
10 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
250 MHz
Nguvu - Max
150 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-723
Kifurushi cha Kifaa cha Muuzaji
VESM
Nambari ya Bidhaa ya Msingi
RN1114
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
RN1114MFVL3F-DG
RN1114MFVL3F
264-RN1114MFV,L3FDKR
264-RN1114MFV,L3FCT
264-RN1114MFV,L3FTR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Digi Cheti
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