RN1105ACT(TPL3)
Nambari ya Bidhaa ya Mtengenezaji:

RN1105ACT(TPL3)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN1105ACT(TPL3)-DG

Maelezo:

TRANS PREBIAS NPN 50V 0.08A CST3
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

Hesabu:

Ombi la Quotations Mtandaoni
12889263
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
EyGy
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN1105ACT(TPL3) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
80 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
2.2 kOhms
Resistor - Msingi wa Emitter (R2)
47 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
150mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Nguvu - Max
100 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-101, SOT-883
Kifurushi cha Kifaa cha Muuzaji
CST3
Nambari ya Bidhaa ya Msingi
RN1105

Taarifa za Ziada

Kifurushi cha Kawaida
10,000
Majina mengine
RN1105ACT(TPL3)TR
RN1105ACT(TPL3)CT
RN1105ACT(TPL3)DKR
RN1105ACT (TPL3)

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Mifano Mbadala

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MTENGENEZAJI
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KIASI KILICHOPATIKANA
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BEI YA KILA KITU
0.09
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Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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