RN1103MFV,L3F(CT
Nambari ya Bidhaa ya Mtengenezaji:

RN1103MFV,L3F(CT

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN1103MFV,L3F(CT-DG

Maelezo:

TRANS PREBIAS NPN 50V 0.1A VESM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Hesabu:

175 Pcs Mpya Halisi Katika Hifadhi
13275907
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
aq9a
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN1103MFV,L3F(CT Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
22 kOhms
Resistor - Msingi wa Emitter (R2)
22 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 500µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Nguvu - Max
150 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-723
Kifurushi cha Kifaa cha Muuzaji
VESM
Nambari ya Bidhaa ya Msingi
RN1103

Karatasi za Takwimu na Nyaraka

Taarifa za Ziada

Kifurushi cha Kawaida
8,000
Majina mengine
264-RN1103MFVL3F(DKR
RN1103MFV,L3F(CB
264-RN1103MFVL3F(TR
264-RN1103MFVL3F(CT

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
toshiba-semiconductor-and-storage

RN1105MFV,L3F(CT

TRANS PREBIAS NPN 50V 0.1A VESM

diodes

ADTC144VCAQ-13

TRANS PREBIAS NPN 50V SOT23-3

micro-commercial-components

DTC143ZUA-TP

TRANS PREBIAS NPN 50V SOT323

micro-commercial-components

DTC143TCA-TP

TRANS PREBIAS NPN 50V SOT23