Nambari ya Bidhaa ya Mtengenezaji:
RN1103MFV,L3F(CT
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1103MFV,L3F(CT-DG
Maelezo:
TRANS PREBIAS NPN 50V 0.1A VESM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Hesabu:
175 Pcs Mpya Halisi Katika Hifadhi
13275907
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
aq9a
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1103MFV,L3F(CT Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
22 kOhms
Resistor - Msingi wa Emitter (R2)
22 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 500µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Nguvu - Max
150 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-723
Kifurushi cha Kifaa cha Muuzaji
VESM
Nambari ya Bidhaa ya Msingi
RN1103
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
264-RN1103MFVL3F(DKR
RN1103MFV,L3F(CB
264-RN1103MFVL3F(TR
264-RN1103MFVL3F(CT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
RN1105MFV,L3F(CT
TRANS PREBIAS NPN 50V 0.1A VESM
ADTC144VCAQ-13
TRANS PREBIAS NPN 50V SOT23-3
DTC143ZUA-TP
TRANS PREBIAS NPN 50V SOT323