RN1101CT(TPL3)
Nambari ya Bidhaa ya Mtengenezaji:

RN1101CT(TPL3)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN1101CT(TPL3)-DG

Maelezo:

TRANS PREBIAS NPN 20V 0.05A CST3
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 50 mA 50 mW Surface Mount CST3

Hesabu:

Ombi la Quotations Mtandaoni
12889351
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
W0EI
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN1101CT(TPL3) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
50 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
20 V
Resistor - Msingi (R1)
4.7 kOhms
Resistor - Msingi wa Emitter (R2)
4.7 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
150mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Nguvu - Max
50 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-101, SOT-883
Kifurushi cha Kifaa cha Muuzaji
CST3
Nambari ya Bidhaa ya Msingi
RN1101

Taarifa za Ziada

Kifurushi cha Kawaida
10,000
Majina mengine
RN1101CT(TPL3)DKR
RN1101CT(TPL3)TR
RN1101CT(TPL3)CT

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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