Nambari ya Bidhaa ya Mtengenezaji:
2SK2963(TE12L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
2SK2963(TE12L,F)-DG
Maelezo:
MOSFET N-CH 100V 1A PW-MINI
Maelezo ya Kina:
N-Channel 100 V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI
Hesabu:
12889528
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
wSq3
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
2SK2963(TE12L,F) Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
100 V
Sasa - Drain inayoendelea (id) @ 25 ° C
1A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4V, 10V
Rds Kwenye (Max) @ Id, Vgs
700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
6.3 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
140 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
500mW (Ta)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PW-MINI
Kifurushi / Kesi
TO-243AA
Nambari ya Bidhaa ya Msingi
2SK2963
Taarifa za Ziada
Kifurushi cha Kawaida
1,000
Majina mengine
2SK2963DKR
2SK2963 (TE12L,F)
2SK2963FCT
2SK2963DKR-DG
2SK2963TE12LF
2SK2963(TE12L)-NDR
2SK2963FDKR
2SK2963FTR
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
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MOSFET N-CH 60V 200MA S-MINI
