SCT3022ALGC11
Nambari ya Bidhaa ya Mtengenezaji:

SCT3022ALGC11

Product Overview

Mtengenezaji:

Rohm Semiconductor

Nambari ya Kipande:

SCT3022ALGC11-DG

Maelezo:

SICFET N-CH 650V 93A TO247N
Maelezo ya Kina:
N-Channel 650 V 93A (Tc) 339W (Tc) Through Hole TO-247N

Hesabu:

1695 Pcs Mpya Halisi Katika Hifadhi
13527008
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
gP3O
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

SCT3022ALGC11 Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
ROHM Semiconductor
Ufungashaji
Tube
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
SiCFET (Silicon Carbide)
Drain kwa Voltage ya Chanzo (Vdss)
650 V
Sasa - Drain inayoendelea (id) @ 25 ° C
93A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
18V
Rds Kwenye (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
Malipo ya lango (Qg) (Max) @ Vgs
133 nC @ 18 V
Vgs (Max)
+22V, -4V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2208 pF @ 500 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
339W (Tc)
Joto la Uendeshaji
175°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
TO-247N
Kifurushi / Kesi
TO-247-3
Nambari ya Bidhaa ya Msingi
SCT3022

Karatasi za Takwimu na Nyaraka

Nyaraka za Kuaminika
MOS-3GTHD Reliability Test
Rasilimali za Ubunifu
TO-247N Inner Structure
Karatasi za data
SCT3022ALGC11 TO-247N Taping Spec

Taarifa za Ziada

Kifurushi cha Kawaida
30

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Bidhaa Zinazohusiana
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