RQ3E150GNTB
Nambari ya Bidhaa ya Mtengenezaji:

RQ3E150GNTB

Product Overview

Mtengenezaji:

Rohm Semiconductor

Nambari ya Kipande:

RQ3E150GNTB-DG

Maelezo:

MOSFET N-CH 30V 15A 8HSMT
Maelezo ya Kina:
N-Channel 30 V 15A (Ta), 39A (Tc) 2W (Ta), 17W (Tc) Surface Mount 8-HSMT (3.2x3)

Hesabu:

19165 Pcs Mpya Halisi Katika Hifadhi
13527273
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RQ3E150GNTB Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
ROHM Semiconductor
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
15A (Ta), 39A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
850 pF @ 15 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
2W (Ta), 17W (Tc)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-HSMT (3.2x3)
Kifurushi / Kesi
8-PowerVDFN
Nambari ya Bidhaa ya Msingi
RQ3E150

Karatasi za Takwimu na Nyaraka

Karatasi za data
RQ3E150GNTB HSMT8 TB Taping Spec

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
RQ3E150GNTBCT
RQ3E150GNTBDKR
RQ3E150GNTBTR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Bidhaa Zinazohusiana
rohm-semi

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