Nambari ya Bidhaa ya Mtengenezaji:
EMD29T2R
Product Overview
Mtengenezaji:
Rohm Semiconductor
Nambari ya Kipande:
EMD29T2R-DG
Maelezo:
TRANS NPN/PNP PREBIAS 0.12W EMT6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6
Hesabu:
1806 Pcs Mpya Halisi Katika Hifadhi
13523144
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
cDa0
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
EMD29T2R Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
ROHM Semiconductor
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
1 NPN, 1 PNP - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA, 500mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V, 12V
Resistor - Msingi (R1)
1kOhms, 10kOhms
Resistor - Msingi wa Emitter (R2)
10kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V / 140 @ 100mA, 2V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
250MHz, 260MHz
Nguvu - Max
120mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
EMT6
Nambari ya Bidhaa ya Msingi
EMD29
Karatasi za Takwimu na Nyaraka
Nyaraka za Kuaminika
Rasilimali za Ubunifu
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
Q3614586
EMD29T2R-ND
EMD29T2RCT
EMD29T2RTR
EMD29T2RDKR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
