PJD3NA50_L2_00001

Nambari ya Bidhaa ya Mtengenezaji:

PJD3NA50_L2_00001

Product Overview

Mtengenezaji:

Panjit International Inc.

Nambari ya Kipande:

PJD3NA50_L2_00001-DG

Maelezo:

500V N-CHANNEL MOSFET

Maelezo ya Kina:

N-Channel 500 V 3A (Ta) 34W (Tc) Surface Mount TO-252

Hesabu:

Ombi la Quotations Mtandaoni

12974368

Omba Nukuu

Kiasi
Kiasi cha chini 1

J2YW

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

PJD3NA50_L2_00001 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

PANJIT

Ufungashaji

-

Mfululizo

-

Hali ya Bidhaa

Not For New Designs

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

500 V

Sasa - Drain inayoendelea (id) @ 25 ° C

3A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

6.5 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

260 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

34W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

TO-252

Kifurushi / Kesi

TO-252-3, DPAK (2 Leads + Tab), SC-63

Nambari ya Bidhaa ya Msingi

PJD3NA50

Taarifa za Ziada

Kifurushi cha Kawaida

3,000

Majina mengine

3757-PJD3NA50_L2_00001TR

3757-PJD3NA50_L2_00001CT

3757-PJD3NA50_L2_00001DKR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

vishay-siliconix

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N-CHANNEL 80 V (D-S) MOSFET POWE

toshiba-semiconductor-and-storage

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COMMON-DRAIN NCH MOSFET, 12V, 13

panjit

PJW5N06A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

panjit

PJQ4441P-AU_R2_000A1

40V P-CHANNEL ENHANCEMENT MODE M