Nambari ya Bidhaa ya Mtengenezaji:
NVH4L075N065SC1
Product Overview
Mtengenezaji:
onsemi
Nambari ya Kipande:
NVH4L075N065SC1-DG
Maelezo:
SIC MOS TO247-4L 650V
Maelezo ya Kina:
N-Channel 650 V 38A (Tc) 148W (Tc) Through Hole TO-247-4L
Hesabu:
450 Pcs Mpya Halisi Katika Hifadhi
12979334
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
BgR8
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
NVH4L075N065SC1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
onsemi
Ufungashaji
Tube
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
SiCFET (Silicon Carbide)
Drain kwa Voltage ya Chanzo (Vdss)
650 V
Sasa - Drain inayoendelea (id) @ 25 ° C
38A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
15V, 18V
Rds Kwenye (Max) @ Id, Vgs
85mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Malipo ya lango (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -8V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1196 pF @ 325 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
148W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
TO-247-4L
Kifurushi / Kesi
TO-247-4
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
450
Majina mengine
488-NVH4L075N065SC1
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
Not Applicable
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
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MOSFET BVDSS: 25V~30V U-DFN2020-
