MJD112-1G
Nambari ya Bidhaa ya Mtengenezaji:

MJD112-1G

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

MJD112-1G-DG

Maelezo:

TRANS NPN DARL 100V 2A IPAK
Maelezo ya Kina:
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK

Hesabu:

153 Pcs Mpya Halisi Katika Hifadhi
12853107
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
9fPn
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

MJD112-1G Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mizani ya Bipolar ya Kizmoja
Mtengenezaji
onsemi
Ufungashaji
Tube
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN - Darlington
Sasa - Mkusanyaji (Ic) (Max)
2 A
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
100 V
Ujazaji wa Vce (Max) @ ib, ic
3V @ 40mA, 4A
Sasa - Kukatwa kwa Mkusanyaji (Max)
20µA
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Nguvu - Max
1.75 W
Mzunguko - Mpito
25MHz
Joto la Uendeshaji
-65°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-251-3 Short Leads, IPak, TO-251AA
Kifurushi cha Kifaa cha Muuzaji
I-PAK
Nambari ya Bidhaa ya Msingi
MJD112

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Taarifa za Ziada

Kifurushi cha Kawaida
75
Majina mengine
ONSONSMJD112-1G
MJD1121G
=MJD112
MJD112-1GOS
2156-MJD112-1G-OS

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
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