MJD112-1G

Nambari ya Bidhaa ya Mtengenezaji:

MJD112-1G

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

MJD112-1G-DG

Maelezo:

TRANS NPN DARL 100V 2A IPAK

Maelezo ya Kina:

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK

Hesabu:

153 Pcs Mpya Halisi Katika Hifadhi

12853107

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

MJD112-1G Maalum ya Kiufundi

Kikundi

Bipolar (BJT), Mizani ya Bipolar ya Kizmoja

Mtengenezaji

onsemi

Ufungashaji

Tube

Mfululizo

-

Hali ya Bidhaa

Active

Aina ya Transistor

NPN - Darlington

Sasa - Mkusanyaji (Ic) (Max)

2 A

Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)

100 V

Ujazaji wa Vce (Max) @ ib, ic

3V @ 40mA, 4A

Sasa - Kukatwa kwa Mkusanyaji (Max)

20µA

DC Gain ya Sasa (hFE) (Min) @ Ic, Vce

1000 @ 2A, 3V

Nguvu - Max

1.75 W

Mzunguko - Mpito

25MHz

Joto la Uendeshaji

-65°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi / Kesi

TO-251-3 Short Leads, IPak, TO-251AA

Kifurushi cha Kifaa cha Muuzaji

I-PAK

Nambari ya Bidhaa ya Msingi

MJD112

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

75

Majina mengine

ONSONSMJD112-1G

MJD1121G

=MJD112

MJD112-1GOS

2156-MJD112-1G-OS

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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onsemi

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