FQP6N80C

Nambari ya Bidhaa ya Mtengenezaji:

FQP6N80C

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FQP6N80C-DG

Maelezo:

MOSFET N-CH 800V 5.5A TO220-3

Maelezo ya Kina:

N-Channel 800 V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3

Hesabu:

344 Pcs Mpya Halisi Katika Hifadhi

12839652

Omba Nukuu

Kiasi
Kiasi cha chini 1

MFmX

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FQP6N80C Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Tube

Mfululizo

QFET®

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

800 V

Sasa - Drain inayoendelea (id) @ 25 ° C

5.5A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

2.5Ohm @ 2.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

30 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

1310 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

158W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-220-3

Kifurushi / Kesi

TO-220-3

Nambari ya Bidhaa ya Msingi

FQP6

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

50

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

Not Applicable

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

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onsemi

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onsemi

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