Nambari ya Bidhaa ya Mtengenezaji:
FQD4P25TM-WS
Product Overview
Mtengenezaji:
onsemi
Nambari ya Kipande:
FQD4P25TM-WS-DG
Maelezo:
MOSFET P-CH 250V 3.1A DPAK
Maelezo ya Kina:
P-Channel 250 V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Hesabu:
12839414
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Dwzp
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
FQD4P25TM-WS Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
onsemi
Ufungashaji
-
Mfululizo
QFET®
Hali ya Bidhaa
Obsolete
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
250 V
Sasa - Drain inayoendelea (id) @ 25 ° C
3.1A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
420 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
2.5W (Ta), 45W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
TO-252AA
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
FQD4P25
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
FQD4P25TM_WS-DG
FQD4P25TM_WSDKR-DG
FQD4P25TM-WSDKR
FQD4P25TM-WSTR
FQD4P25TM_WS
FQD4P25TM-WSCT
FQD4P25TM_WSDKR
FQD4P25TM_WSTR
FQD4P25TM_WSCT-DG
FQD4P25TM_WSCT
FQD4P25TM_WSTR-DG
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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