FDP22N50N

Nambari ya Bidhaa ya Mtengenezaji:

FDP22N50N

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDP22N50N-DG

Maelezo:

MOSFET N-CH 500V 22A TO220-3

Maelezo ya Kina:

N-Channel 500 V 22A (Tc) 312.5W (Tc) Through Hole TO-220-3

Hesabu:

987 Pcs Mpya Halisi Katika Hifadhi

12838372

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDP22N50N Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Tube

Mfululizo

UniFET™

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

500 V

Sasa - Drain inayoendelea (id) @ 25 ° C

22A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

220mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

65 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

3200 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

312.5W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-220-3

Kifurushi / Kesi

TO-220-3

Nambari ya Bidhaa ya Msingi

FDP22

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

50

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

Not Applicable

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

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