FDMS86163P

Nambari ya Bidhaa ya Mtengenezaji:

FDMS86163P

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDMS86163P-DG

Maelezo:

MOSFET P-CH 100V 7.9A/50A 8PQFN

Maelezo ya Kina:

P-Channel 100 V 7.9A (Ta), 50A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Hesabu:

Ombi la Quotations Mtandaoni

12848315

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDMS86163P Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Tape & Reel (TR)

Mfululizo

PowerTrench®

Hali ya Bidhaa

Active

Aina ya FET

P-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

100 V

Sasa - Drain inayoendelea (id) @ 25 ° C

7.9A (Ta), 50A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

6V, 10V

Rds Kwenye (Max) @ Id, Vgs

22mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

59 nC @ 10 V

Vgs (Max)

±25V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

4085 pF @ 50 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

2.5W (Ta), 104W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

8-PQFN (5x6)

Kifurushi / Kesi

8-PowerTDFN

Nambari ya Bidhaa ya Msingi

FDMS86163

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

3,000

Majina mengine

FDMS86163PDKR

FDMS86163PTR

FDMS86163PCT

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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onsemi

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