FDFS2P103A
Nambari ya Bidhaa ya Mtengenezaji:

FDFS2P103A

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDFS2P103A-DG

Maelezo:

MOSFET P-CH 30V 5.3A 8SOIC
Maelezo ya Kina:
P-Channel 30 V 5.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC

Hesabu:

12850369
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
wSh8
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

FDFS2P103A Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
onsemi
Ufungashaji
-
Mfululizo
PowerTrench®
Hali ya Bidhaa
Obsolete
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
5.3A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
59mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
8 nC @ 5 V
Vgs (Max)
±25V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
535 pF @ 15 V
Kipengele cha FET
Schottky Diode (Isolated)
Usambazaji wa Nguvu (Max)
900mW (Ta)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-SOIC
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Nambari ya Bidhaa ya Msingi
FDFS2

Karatasi za Takwimu na Nyaraka

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Taarifa za Ziada

Kifurushi cha Kawaida
2,500
Majina mengine
FDFS2P103A_NLTR-DG
FDFS2P103ACT-NDR
FDFS2P103A_NLCT
FDFS2P103A_NLCT-DG
FDFS2P103A_NL
FDFS2P103A_NLTR
FDFS2P103ACT
FDFS2P103ATR
FDFS2P103ATR-NDR
FDFS2P103ADKR

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
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