FDD86367

Nambari ya Bidhaa ya Mtengenezaji:

FDD86367

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDD86367-DG

Maelezo:

MOSFET N-CH 80V 100A DPAK

Maelezo ya Kina:

N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252 (DPAK)

Hesabu:

40875 Pcs Mpya Halisi Katika Hifadhi

12838752

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDD86367 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Tape & Reel (TR)

Mfululizo

PowerTrench®

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

80 V

Sasa - Drain inayoendelea (id) @ 25 ° C

100A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

4.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

88 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

4840 pF @ 40 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

227W (Tj)

Joto la Uendeshaji

-55°C ~ 175°C (TJ)

Daraja

Automotive

Uhitimu

AEC-Q101

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

TO-252 (DPAK)

Kifurushi / Kesi

TO-252-3, DPAK (2 Leads + Tab), SC-63

Nambari ya Bidhaa ya Msingi

FDD863

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

2,500

Majina mengine

FDD86367-DG

FDD86367OSCT

FDD86367OSDKR

FDD86367OSTR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

HUFA76443S3S

MOSFET N-CH 60V 75A D2PAK

onsemi

HUF75645S3ST

MOSFET N-CH 100V 75A D2PAK

onsemi

FQP24N08

MOSFET N-CH 80V 24A TO220-3

onsemi

FQP3N40

MOSFET N-CH 400V 2.5A TO220-3