Nambari ya Bidhaa ya Mtengenezaji:

FDC855N

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDC855N-DG

Maelezo:

MOSFET N-CH 30V 6.1A SUPERSOT6

Maelezo ya Kina:

N-Channel 30 V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Hesabu:

6369 Pcs Mpya Halisi Katika Hifadhi

12846737

Omba Nukuu

Kiasi
Kiasi cha chini 1

ez3X

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDC855N Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Tape & Reel (TR)

Mfululizo

PowerTrench®

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

30 V

Sasa - Drain inayoendelea (id) @ 25 ° C

6.1A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

4.5V, 10V

Rds Kwenye (Max) @ Id, Vgs

27mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

13 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

655 pF @ 15 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

1.6W (Ta)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

SuperSOT™-6

Kifurushi / Kesi

SOT-23-6 Thin, TSOT-23-6

Nambari ya Bidhaa ya Msingi

FDC855

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

3,000

Majina mengine

FDC855NTR

2832-FDC855N

FDC855NCT

FDC855NDKR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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onsemi

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MOSFET P-CH 60V 1.25A SUPERSOT3

onsemi

FDMS86255

MOSFET N-CH 150V 10A/45A POWER56

infineon-technologies

IPA80R600P7XKSA1

MOSFET N-CHANNEL 800V 8A TO220