2SB1216T-E

Nambari ya Bidhaa ya Mtengenezaji:

2SB1216T-E

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

2SB1216T-E-DG

Maelezo:

TRANS PNP 100V 4A TP

Maelezo ya Kina:

Bipolar (BJT) Transistor PNP 100 V 4 A 130MHz 1 W Through Hole TP

Hesabu:

Ombi la Quotations Mtandaoni

12837039

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

2SB1216T-E Maalum ya Kiufundi

Kikundi

Bipolar (BJT), Mizani ya Bipolar ya Kizmoja

Mtengenezaji

onsemi

Ufungashaji

-

Mfululizo

-

Hali ya Bidhaa

Obsolete

Aina ya Transistor

PNP

Sasa - Mkusanyaji (Ic) (Max)

4 A

Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)

100 V

Ujazaji wa Vce (Max) @ ib, ic

500mV @ 200mA, 2A

Sasa - Kukatwa kwa Mkusanyaji (Max)

1µA (ICBO)

DC Gain ya Sasa (hFE) (Min) @ Ic, Vce

200 @ 500mA, 5V

Nguvu - Max

1 W

Mzunguko - Mpito

130MHz

Joto la Uendeshaji

150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi / Kesi

TO-251-3 Short Leads, IPak, TO-251AA

Kifurushi cha Kifaa cha Muuzaji

TP

Nambari ya Bidhaa ya Msingi

2SB1216

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

500

Majina mengine

ONSONS2SB1216T-E

2156-2SB1216T-E-ON

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0075

Mifano Mbadala

NAMBARI YA SEHEMU

2SB1216S-TL-E

MTENGENEZAJI

onsemi

KIASI KILICHOPATIKANA

1071

Nambari ya Sehemu

2SB1216S-TL-E-DG

BEI YA KILA KITU

0.27

AINA YA KUBADILISHA

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