Nambari ya Bidhaa ya Mtengenezaji:
PSMN2R0-30YL,115
Product Overview
Mtengenezaji:
Nexperia USA Inc.
Nambari ya Kipande:
PSMN2R0-30YL,115-DG
Maelezo:
MOSFET N-CH 30V 100A LFPAK56
Maelezo ya Kina:
N-Channel 30 V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8
Hesabu:
20769 Pcs Mpya Halisi Katika Hifadhi
12831553
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
wbb7
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
PSMN2R0-30YL,115 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Nexperia
Ufungashaji
Tape & Reel (TR)
Mfululizo
TrenchMOS™
Hali ya Bidhaa
Not For New Designs
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
100A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3980 pF @ 12 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
97W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
LFPAK56, Power-SO8
Kifurushi / Kesi
SC-100, SOT-669
Nambari ya Bidhaa ya Msingi
PSMN2R0
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
1,500
Majina mengine
5202-PSMN2R0-30YL,115TR
568-4679-1
568-4679-2
934063069115
PSMN2R0-30YL T/R
1727-4163-6
1727-4163-1
1727-4163-2
568-4679-6-DG
568-4679-1-DG
568-4679-2-DG
568-4679-6
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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