IXTN32P60P

Nambari ya Bidhaa ya Mtengenezaji:

IXTN32P60P

Product Overview

Mtengenezaji:

IXYS

Nambari ya Kipande:

IXTN32P60P-DG

Maelezo:

MOSFET P-CH 600V 32A SOT227B

Maelezo ya Kina:

P-Channel 600 V 32A (Tc) 890W (Tc) Chassis Mount SOT-227B

Hesabu:

226 Pcs Mpya Halisi Katika Hifadhi

12820869

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IXTN32P60P Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Littelfuse

Ufungashaji

Tube

Mfululizo

PolarP™

Hali ya Bidhaa

Active

Aina ya FET

P-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

600 V

Sasa - Drain inayoendelea (id) @ 25 ° C

32A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

350mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Malipo ya lango (Qg) (Max) @ Vgs

196 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

11100 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

890W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Chassis Mount

Kifurushi cha Kifaa cha Muuzaji

SOT-227B

Kifurushi / Kesi

SOT-227-4, miniBLOC

Nambari ya Bidhaa ya Msingi

IXTN32

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

10

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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