Nambari ya Bidhaa ya Mtengenezaji:

IXTF1N250

Product Overview

Mtengenezaji:

IXYS

Nambari ya Kipande:

IXTF1N250-DG

Maelezo:

MOSFET N-CH 2500V 1A ISOPLUS I4

Maelezo ya Kina:

N-Channel 2500 V 1A (Tc) 110W Through Hole ISOPLUS i4-PAC™

Hesabu:

Ombi la Quotations Mtandaoni

12819673

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IXTF1N250 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Littelfuse

Ufungashaji

Tube

Mfululizo

-

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

2500 V

Sasa - Drain inayoendelea (id) @ 25 ° C

1A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

40Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

41 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

1660 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

110W

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

ISOPLUS i4-PAC™

Kifurushi / Kesi

i4-Pac™-5 (3 Leads)

Nambari ya Bidhaa ya Msingi

IXTF1

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

25

Majina mengine

Q7319967A

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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