IXTA1N200P3HV

Nambari ya Bidhaa ya Mtengenezaji:

IXTA1N200P3HV

Product Overview

Mtengenezaji:

IXYS

Nambari ya Kipande:

IXTA1N200P3HV-DG

Maelezo:

MOSFET N-CH 2000V 1A TO263

Maelezo ya Kina:

N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263AA

Hesabu:

1165 Pcs Mpya Halisi Katika Hifadhi

12819748

Omba Nukuu

Kiasi
Kiasi cha chini 1

RazD

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IXTA1N200P3HV Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Littelfuse

Ufungashaji

Tube

Mfululizo

Polar P3™

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

2000 V

Sasa - Drain inayoendelea (id) @ 25 ° C

1A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

40Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

23.5 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

646 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

125W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

TO-263AA

Kifurushi / Kesi

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Nambari ya Bidhaa ya Msingi

IXTA1

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

IXTA1N200P3HV-DG

Karatasi za data

IXTx1N200P3(HV)

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

50

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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littelfuse

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