IXFN20N120P

Nambari ya Bidhaa ya Mtengenezaji:

IXFN20N120P

Product Overview

Mtengenezaji:

IXYS

Nambari ya Kipande:

IXFN20N120P-DG

Maelezo:

MOSFET N-CH 1200V 20A SOT-227B

Maelezo ya Kina:

N-Channel 1200 V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B

Hesabu:

Ombi la Quotations Mtandaoni

12820316

Omba Nukuu

Kiasi
Kiasi cha chini 1

6SCp

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IXFN20N120P Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Littelfuse

Ufungashaji

Tube

Mfululizo

HiPerFET™, Polar

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

1200 V

Sasa - Drain inayoendelea (id) @ 25 ° C

20A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

570mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Malipo ya lango (Qg) (Max) @ Vgs

193 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

11100 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

595W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Chassis Mount

Kifurushi cha Kifaa cha Muuzaji

SOT-227B

Kifurushi / Kesi

SOT-227-4, miniBLOC

Nambari ya Bidhaa ya Msingi

IXFN20

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

10

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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