Nambari ya Bidhaa ya Mtengenezaji:
SPW16N50C3FKSA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
SPW16N50C3FKSA1-DG
Maelezo:
MOSFET N-CH 560V 16A TO247-3
Maelezo ya Kina:
N-Channel 560 V 16A (Tc) 160W (Tc) Through Hole PG-TO247-3-1
Hesabu:
196 Pcs Mpya Halisi Katika Hifadhi
12807790
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
SPW16N50C3FKSA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tube
Mfululizo
CoolMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
560 V
Sasa - Drain inayoendelea (id) @ 25 ° C
16A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.9V @ 675µA
Malipo ya lango (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1600 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
160W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
PG-TO247-3-1
Kifurushi / Kesi
TO-247-3
Nambari ya Bidhaa ya Msingi
SPW16N50
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
30
Majina mengine
SPW16N50C3XTIN-DG
2156-SPW16N50C3FKSA1
IFEINFSPW16N50C3FKSA1
SPW16N50C3IN-NDR
SPW16N50C3XK
SPW16N50C3IN
SPW16N50C3XTIN
SPW16N50C3
SPW16N50C3IN-DG
SP000014472
SPW16N50C3X
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SPP11N65C3XKSA1
MOSFET N-CH 650V 11A TO220-3
IRL3103L
MOSFET N-CH 30V 64A TO262
IRLMS6802TR
MOSFET P-CH 20V 5.6A 6-TSOP
