Nambari ya Bidhaa ya Mtengenezaji:
IRF7322D1TRPBF
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IRF7322D1TRPBF-DG
Maelezo:
MOSFET P-CH 20V 5.3A 8SO
Maelezo ya Kina:
P-Channel 20 V 5.3A (Ta) 2W (Ta) Surface Mount 8-SO
Hesabu:
12805669
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Oc8Z
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IRF7322D1TRPBF Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
-
Mfululizo
FETKY™
Hali ya Bidhaa
Obsolete
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
20 V
Sasa - Drain inayoendelea (id) @ 25 ° C
5.3A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds Kwenye (Max) @ Id, Vgs
62mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Malipo ya lango (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±12V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
780 pF @ 15 V
Kipengele cha FET
Schottky Diode (Isolated)
Usambazaji wa Nguvu (Max)
2W (Ta)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-SO
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
4,000
Majina mengine
IRF7322D1TRPBFTR-DG
IRF7322D1TRPBF-DG
SP001570204
IRF7322D1PBFDKR
*IRF7322D1TRPBF
IRF7322D1PBFTR
IRF7322D1PBFCT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
IPP47N10SL26AKSA1
MOSFET N-CH 100V 47A TO220-3
IRFR3710ZTRL
MOSFET N-CH 100V 42A DPAK
IPU09N03LA G
MOSFET N-CH 25V 50A TO251-3
