Nambari ya Bidhaa ya Mtengenezaji:

IRF6201PBF

Product Overview

Mtengenezaji:

Infineon Technologies

Nambari ya Kipande:

IRF6201PBF-DG

Maelezo:

MOSFET N-CH 20V 27A 8SO

Maelezo ya Kina:

N-Channel 20 V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO

Hesabu:

Ombi la Quotations Mtandaoni

12804585

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IRF6201PBF Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Infineon Technologies

Ufungashaji

-

Mfululizo

HEXFET®

Hali ya Bidhaa

Discontinued at Digi-Key

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

20 V

Sasa - Drain inayoendelea (id) @ 25 ° C

27A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds Kwenye (Max) @ Id, Vgs

2.45mOhm @ 27A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 100µA

Malipo ya lango (Qg) (Max) @ Vgs

195 nC @ 4.5 V

Vgs (Max)

±12V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

8555 pF @ 16 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

2.5W (Ta)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

8-SO

Kifurushi / Kesi

8-SOIC (0.154", 3.90mm Width)

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

95

Majina mengine

2156-IRF6201PBF-IT

INFINFIRF6201PBF

SP001570096

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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