Nambari ya Bidhaa ya Mtengenezaji:
IPP076N12N3GXKSA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPP076N12N3GXKSA1-DG
Maelezo:
MOSFET N-CH 120V 100A TO220-3
Maelezo ya Kina:
N-Channel 120 V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3
Hesabu:
261 Pcs Mpya Halisi Katika Hifadhi
12805104
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
V3tw
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPP076N12N3GXKSA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tube
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
120 V
Sasa - Drain inayoendelea (id) @ 25 ° C
100A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 130µA
Malipo ya lango (Qg) (Max) @ Vgs
101 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
6640 pF @ 60 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
188W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
PG-TO220-3
Kifurushi / Kesi
TO-220-3
Nambari ya Bidhaa ya Msingi
IPP076
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
50
Majina mengine
SP000652736
IPP076N12N3G
IPP076N12N3 G-DG
IPP076N12N3 G
IPP076N12N3GXKSA1-DG
448-IPP076N12N3GXKSA1
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
IRFR9024NPBF
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IRFR4105TRL
MOSFET N-CH 55V 27A DPAK
