Nambari ya Bidhaa ya Mtengenezaji:
IPD65R950CFDATMA2
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPD65R950CFDATMA2-DG
Maelezo:
MOSFET N-CH 650V 3.9A TO252-3
Maelezo ya Kina:
N-Channel 650 V 3.9A (Tc) 36.7W (Tc) Surface Mount PG-TO252-3
Hesabu:
2500 Pcs Mpya Halisi Katika Hifadhi
12801237
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPD65R950CFDATMA2 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
CoolMOS™ CFD2
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
650 V
Sasa - Drain inayoendelea (id) @ 25 ° C
3.9A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Malipo ya lango (Qg) (Max) @ Vgs
14.1 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
380 pF @ 100 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
36.7W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO252-3
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
IPD65R950
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
IPD65R950CFDATMA2-DG
SP001977060
448-IPD65R950CFDATMA2TR
448-IPD65R950CFDATMA2DKR
448-IPD65R950CFDATMA2CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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