IPD50P03P4L11ATMA2
Nambari ya Bidhaa ya Mtengenezaji:

IPD50P03P4L11ATMA2

Product Overview

Mtengenezaji:

Infineon Technologies

Nambari ya Kipande:

IPD50P03P4L11ATMA2-DG

Maelezo:

MOSFET P-CH 30V 50A TO252-31
Maelezo ya Kina:
P-Channel 30 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-11

Hesabu:

19920 Pcs Mpya Halisi Katika Hifadhi
12948678
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
cNlt
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

IPD50P03P4L11ATMA2 Maalum ya Kiufundi

Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS®-P2
Hali ya Bidhaa
Active
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
50A (Tc)
Rds Kwenye (Max) @ Id, Vgs
10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 85µA
Malipo ya lango (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
+5V, -16V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3770 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
58W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO252-3-11
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
IPD50

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Taarifa za Ziada

Kifurushi cha Kawaida
2,500
Majina mengine
448-IPD50P03P4L11ATMA2TR
SP002325738
448-IPD50P03P4L11ATMA2CT
448-IPD50P03P4L11ATMA2DKR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
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