Nambari ya Bidhaa ya Mtengenezaji:
IPB60R080P7ATMA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPB60R080P7ATMA1-DG
Maelezo:
MOSFET N-CH 600V 37A D2PAK
Maelezo ya Kina:
N-Channel 600 V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
Hesabu:
12806911
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
E0LZ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPB60R080P7ATMA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
CoolMOS™ P7
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
600 V
Sasa - Drain inayoendelea (id) @ 25 ° C
37A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id
4V @ 590µA
Malipo ya lango (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2180 pF @ 400 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
129W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO263-3
Kifurushi / Kesi
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Nambari ya Bidhaa ya Msingi
IPB60R080
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
1,000
Majina mengine
IPB60R080P7ATMA1TR
IPB60R080P7ATMA1-DG
IPB60R080P7
SP001664898
IFEINFIPB60R080P7ATMA1
IPB60R080P7ATMA1DKR
2156-IPB60R080P7ATMA1
IPB60R080P7ATMA1CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SPD04N50C3T
MOSFET N-CH 560V 4.5A DPAK
SPU03N60S5BKMA1
MOSFET N-CH 600V 3.2A TO251-3
TN0604N3-G-P005
MOSFET N-CH 40V 700MA TO92-3
