Nambari ya Bidhaa ya Mtengenezaji:
IPB019N08N3GATMA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPB019N08N3GATMA1-DG
Maelezo:
MOSFET N-CH 80V 180A TO263-7
Maelezo ya Kina:
N-Channel 80 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Hesabu:
8632 Pcs Mpya Halisi Katika Hifadhi
12800599
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
NzC1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPB019N08N3GATMA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
80 V
Sasa - Drain inayoendelea (id) @ 25 ° C
180A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6V, 10V
Rds Kwenye (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 270µA
Malipo ya lango (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
14200 pF @ 40 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
300W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO263-7
Kifurushi / Kesi
TO-263-7, D2PAK (6 Leads + Tab)
Nambari ya Bidhaa ya Msingi
IPB019
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
1,000
Majina mengine
IPB019N08N3GATMA1CT
IPB019N08N3 G-DG
IPB019N08N3 G
Q4136793
IPB019N08N3 GCT
IPB019N08N3 GTR-DG
IPB019N08N3GATMA1TR
SP000444110
2832-IPB019N08N3GATMA1-TR
IPB019N08N3G
IPB019N08N3 GCT-DG
IPB019N08N3 GDKR-DG
IPB019N08N3 GDKR
IPB019N08N3GATMA1DKR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
IPI25N06S3L-22
MOSFET N-CH 55V 25A TO262-3
IPB117N20NFDATMA1
MOSFET N-CH 200V 84A TO263-3
IPC100N04S5L1R5ATMA1
MOSFET N-CH 40V 100A 8TDSON-34
