Nambari ya Bidhaa ya Mtengenezaji:
BSC010N04LS6ATMA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
BSC010N04LS6ATMA1-DG
Maelezo:
MOSFET N-CH 40V 40A/100A TDSON
Maelezo ya Kina:
N-Channel 40 V 40A (Ta), 100A (Tc) 3W (Ta), 150W (Tc) Surface Mount PG-TDSON-8-6
Hesabu:
10555 Pcs Mpya Halisi Katika Hifadhi
12798697
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
qW5N
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
BSC010N04LS6ATMA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
40 V
Sasa - Drain inayoendelea (id) @ 25 ° C
40A (Ta), 100A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
67 nC @ 4.5 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
4600 pF @ 20 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
3W (Ta), 150W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TDSON-8-6
Kifurushi / Kesi
8-PowerTDFN
Nambari ya Bidhaa ya Msingi
BSC010
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Jarida la Takwimu
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
5,000
Majina mengine
BSC010N04LS6ATMA1CT
SP001687044
BSC010N04LS6ATMA1-DG
BSC010N04LS6ATMA1TR
BSC010N04LS6ATMA1DKR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
BSC029N025S G
MOSFET N-CH 25V 24A/100A TDSON
AUIRFR2607Z
MOSFET N-CH 75V 42A DPAK
BSF083N03LQ G
MOSFET N-CH 30V 13A/53A 2WDSON