NDS356AP-NB8L005A

Nambari ya Bidhaa ya Mtengenezaji:

NDS356AP-NB8L005A

Product Overview

Mtengenezaji:

Fairchild Semiconductor

Nambari ya Kipande:

NDS356AP-NB8L005A-DG

Maelezo:

-30V P-CHANNEL LOGIC LEVEL ENHAN

Maelezo ya Kina:

P-Channel 30 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Hesabu:

83726 Pcs Mpya Halisi Katika Hifadhi

12968080

Omba Nukuu

Kiasi
Kiasi cha chini 1

yE82

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

NDS356AP-NB8L005A Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Ufungashaji

Bulk

Mfululizo

-

Hali ya Bidhaa

Active

Aina ya FET

P-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

30 V

Sasa - Drain inayoendelea (id) @ 25 ° C

1.1A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

4.5V, 10V

Rds Kwenye (Max) @ Id, Vgs

200mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

4.4 nC @ 5 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

280 pF @ 10 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

500mW (Ta)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

SOT-23-3

Kifurushi / Kesi

TO-236-3, SC-59, SOT-23-3

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

NDS356AP-NB8L005A-DG

Karatasi za data

Jarida la Takwimu

NDS356AP-NB8L005A

Taarifa za Ziada

Kifurushi cha Kawaida

1,576

Majina mengine

2156S356AP-NB8L005A-600039

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

Vendor Undefined

Hali ya REACH

REACH Unaffected

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

nexperia

BUK9515-100A127

NEXPERIA BUK9515-100A - POWER FI

NTNS3CS94NZT5G

2.8A, 20V, 0.09OHM, N-CHANNEL MO

nxp-semiconductors

BUK7660-100A,118

NEXPERIA BUK7660 - N-CHANNEL TRE

transphorm

TP65H035G4WSQA

650 V 46.5 GAN FET