FDS8878

Nambari ya Bidhaa ya Mtengenezaji:

FDS8878

Product Overview

Mtengenezaji:

Fairchild Semiconductor

Nambari ya Kipande:

FDS8878-DG

Maelezo:

POWER FIELD-EFFECT TRANSISTOR, 1

Maelezo ya Kina:

N-Channel 30 V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Hesabu:

570614 Pcs Mpya Halisi Katika Hifadhi

12946932

Omba Nukuu

Kiasi
Kiasi cha chini 1

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDS8878 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Ufungashaji

Bulk

Mfululizo

PowerTrench®

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

30 V

Sasa - Drain inayoendelea (id) @ 25 ° C

10.2A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

4.5V, 10V

Rds Kwenye (Max) @ Id, Vgs

14mOhm @ 10.2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

26 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

897 pF @ 15 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

2.5W (Ta)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

8-SOIC

Kifurushi / Kesi

8-SOIC (0.154", 3.90mm Width)

Karatasi za Takwimu na Nyaraka

Karatasi za data

Taarifa za Ziada

Kifurushi cha Kawaida

1,389

Majina mengine

2156-FDS8878

FAIFSCFDS8878

Uainishaji wa Mazingira na Usafirishaji

ECCN

EAR99

HTSUS

8542.39.0001

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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