Nambari ya Bidhaa ya Mtengenezaji:
DMT64M1LCG-7
Product Overview
Mtengenezaji:
Diodes Incorporated
Nambari ya Kipande:
DMT64M1LCG-7-DG
Maelezo:
MOSFET BVDSS: 61V~100V V-DFN3333
Maelezo ya Kina:
N-Channel 65 V 16.7A (Ta), 67.8A (Tc) 1.2W (Ta) Surface Mount V-DFN3333-8 (Type B)
Hesabu:
12979169
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
tLRh
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
DMT64M1LCG-7 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Diodes Incorporated
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
65 V
Sasa - Drain inayoendelea (id) @ 25 ° C
16.7A (Ta), 67.8A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
51.4 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2626 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
1.2W (Ta)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
V-DFN3333-8 (Type B)
Kifurushi / Kesi
8-PowerVDFN
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Majina mengine
31-DMT64M1LCG-7TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
DMT64M8LCG-13
MOSFET BVDSS: 61V~100V V-DFN3333
DMP31D7L-7
MOSFET BVDSS: 25V~30V SOT23 T&R
DMN3009LFVQ-7
MOSFET BVDSS: 25V~30V POWERDI333
