Nambari ya Bidhaa ya Mtengenezaji:
DMN60H080DS-7
Product Overview
Mtengenezaji:
Diodes Incorporated
Nambari ya Kipande:
DMN60H080DS-7-DG
Maelezo:
MOSFET N-CH 600V 80MA SOT23-3
Maelezo ya Kina:
N-Channel 600 V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3
Hesabu:
48241 Pcs Mpya Halisi Katika Hifadhi
12888244
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
DMN60H080DS-7 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Diodes Incorporated
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
600 V
Sasa - Drain inayoendelea (id) @ 25 ° C
80mA (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
1.7 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
25 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
1.1W (Ta)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
SOT-23-3
Kifurushi / Kesi
TO-236-3, SC-59, SOT-23-3
Nambari ya Bidhaa ya Msingi
DMN60
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
DMN60H080DS-7DIDKR
DMN60H080DS-7-DG
DMN60H080DS-7DICT
DMN60H080DS-7DITR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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